Title :
Ka-Band BiCMOS 4-Bit Phase Shifter with Integrated LNA for Phased Array T/R Modules
Author :
Min, Byung-Wook ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of Michigan, Ann Arbor
Abstract :
This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 mum SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1plusmn1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7deg at 30-38 GHz. The total chip size is 900times400 mum2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; field effect transistor switches; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; millimetre wave phase shifters; 4-bit phase shifter; Ka-band BiCMOS; Ka-band silicon-based phase shifter; MOSFET switches; SiGe; SiGe HBT; current 3 mA; frequency 30 GHz to 38 GHz; gain 1.5 dB; integrated LNA; miniature low-pass networks; noise figure 5 dB; phased array T-R modules; power 5.4 mW; size 0.12 mum; voltage 1.8 V; word length 4 bit; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFET circuits; Noise figure; Phase shifters; Phased arrays; Silicon germanium; Switches; CMOS switch; Ka-band; LNA; SiGe; T/R module; phase shifter; phased array;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380511
