DocumentCode
2967051
Title
High aspect ratio GalnAsP/InP photonic crystal waveguide — fabrication, slow light, and enhanced gain
Author
Nakada, Takashi ; Baba, Toshihiko
Author_Institution
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
331
Lastpage
332
Abstract
We fabricated a GaInAsP photonic crystal waveguide consisting of airholes with a high aspect ratio of over 20. We observed the slow light propagation and enhanced gain with photopumping.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical pumping; optical waveguides; photonic crystals; slow light; GaInAsP-InP; airholes; aspect ratio; enhanced gain; photonic crystal waveguide; photopumping; slow light propagation; Etching; Indium phosphide; Optical device fabrication; Optical propagation; Optical waveguides; Photonic crystals; Resists; Semiconductor waveguides; Slabs; Slow light;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634568
Filename
4634568
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