DocumentCode :
2967072
Title :
FET thermal converters
Author :
Kurten Ihlenfeld, W.G.
Author_Institution :
LAC/COPEL, Curitiba, Brazil
fYear :
1998
fDate :
6-10 July 1998
Firstpage :
516
Lastpage :
517
Abstract :
Field Effect Transistor Thermal Converters (FET-TCs) use FETs working as dynamically controlled impedances, enabling an exact control of the dissipated power proportional to the product of the FET´s drain voltage and source current. The temperature increase caused is directly proportional to the time-averaged internally dissipated power. A FET-TC based on MOSFETs was analysed from the thermal and electrical point of view and constructed to measure rms values of electrical ac quantities including power with uncertainties in the ppm level.
Keywords :
Green´s function methods; MOSFET circuits; bridge circuits; calibration; convertors; equivalent circuits; feedback amplifiers; power measurement; transfer standards; voltage measurement; voltage multipliers; wattmeters; AC-DC transfer; FET thermal converters; Green functions; MOSFET based converter; RMS values; amplifier feedback loop; dissipated power control; dynamically controlled impedances; electrical AC quantities; equivalent circuit; modelling; temperature increase; thermal power bridge; time-averaged internally dissipated power; uncertainties; Circuits; FETs; Heat transfer; Insulation; MOSFETs; Power measurement; Proportional control; Temperature measurement; Temperature sensors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
Type :
conf
DOI :
10.1109/CPEM.1998.700033
Filename :
700033
Link To Document :
بازگشت