DocumentCode :
2967134
Title :
Growth and properties of InAlN nanocolumns emitting in optical communication wavelengths
Author :
Kamimura, J. ; Kishino, Katsumi ; Kikuchi, A.
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
341
Lastpage :
342
Abstract :
InxAl1-xN nanocolumns (0.71lesxInles1.00) were fabricated on Si (111) substrates by RF-MBE. The room temperature photoluminescence (RT-PL) in optical communication wavelengths from 0.95 to 1.94 mum with changing xIn was observed. InN/InAlN heterostructures were also fabricated.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; molecular beam epitaxial growth; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; InxAl1-xN; InN-InAlN; RF-MBE; Si; heterostructures; nanocolumns; optical communication wavelengths; room temperature photoluminescence; temperature 293 K to 298 K; wavelength 0.95 mum to 1.94 mum; Crystals; Gallium nitride; Light emitting diodes; Optical fiber communication; Optical surface waves; Photoluminescence; Quantum well devices; Scanning electron microscopy; Self-assembly; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634571
Filename :
4634571
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2967134
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