DocumentCode
2967161
Title
Selective area growth of GaN nanocolumns by RF-MBE for light emitting devices
Author
Ishizawa, Shunsuke ; Kishino, Katsumi ; Kikuchi, A.
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
347
Lastpage
348
Abstract
Periodical GaN nanocolumn arrays were grown on (111) Si substrates with AlN patterns by RF-MBE. Positional controls of nanocolumns were realized by artificial control of GaN nucleation using AlN nano-dot and AlN nano-hole patterns.
Keywords
III-V semiconductors; gallium compounds; light emitting devices; molecular beam epitaxial growth; nanopatterning; nanostructured materials; nucleation; semiconductor growth; semiconductor quantum dots; (111) Si substrates; GaN; RF-MBE; Si; light emitting devices; nanocolumns; nanodot pattern; nanohole pattern; nucleation; selective area growth; Crystallization; Etching; Gallium nitride; Nanocrystals; Nanoscale devices; Nanotechnology; Optical arrays; Scanning electron microscopy; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634573
Filename
4634573
Link To Document