Title :
Selective area growth of GaN nanocolumns by RF-MBE for light emitting devices
Author :
Ishizawa, Shunsuke ; Kishino, Katsumi ; Kikuchi, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
Periodical GaN nanocolumn arrays were grown on (111) Si substrates with AlN patterns by RF-MBE. Positional controls of nanocolumns were realized by artificial control of GaN nucleation using AlN nano-dot and AlN nano-hole patterns.
Keywords :
III-V semiconductors; gallium compounds; light emitting devices; molecular beam epitaxial growth; nanopatterning; nanostructured materials; nucleation; semiconductor growth; semiconductor quantum dots; (111) Si substrates; GaN; RF-MBE; Si; light emitting devices; nanocolumns; nanodot pattern; nanohole pattern; nucleation; selective area growth; Crystallization; Etching; Gallium nitride; Nanocrystals; Nanoscale devices; Nanotechnology; Optical arrays; Scanning electron microscopy; Substrates; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634573
