Design and fabrication of a low insertion loss and high isolation Si-based micro-switch using MEMS technology

This study designs and fabricates a novel suspending micro-switch on silicon substrate using surface micromachining techniques for wireless communication. The proposed Si-based micro-switch with dimensions of 750 μm × 850 μm × 500 μm is constructed of one bottom GSG electrode, four non-isometric springs and two arched top electrodes. Using commercial Ansoft-HFSS simulation software, the dimension is optimized for development of a Si-based micro-switch with low loss, high isolation and low capacitance. The implemented Si-based micro-switch demonstrates very low insertion loss (-1.6 dB at on-state), very high isolation (-58.46 dB at off-state) and low capacitance (1.78 fF at 4.5 GHz).