Title :
Increment of voltage gain of InP/InGaAs hot electron transistors controlled by insulated gate
Author :
Saito, Hisashi ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
Abstract :
An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Voltage gain is increased by improved fabrication process.
Keywords :
III-V semiconductors; gallium arsenide; hot electron transistors; indium compounds; insulated gate bipolar transistors; InP-InGaAs; heterostructure launcher; hot electron transistors; insulated gate; intrinsic region; voltage gain; Electrodes; Electrons; Fabrication; Indium gallium arsenide; Indium phosphide; Insulation; Transportation; Tungsten; Voltage control; Wet etching;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634575
