• DocumentCode
    2967329
  • Title

    Hierarcical strategy for quantification of NOx in a varying background of typical exhaust gases

  • Author

    Bur, Christian ; Schütze, Andreas ; Andersson, Mike ; Spetz, Anita Lloyd

  • Author_Institution
    Dept. of Mechatron., Saarland Univ., Saarbrücken, Germany
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    Silicon carbide based metal insulator field effect transistors (MISiC FET) with a catalytic gate metallization were used in temperature cycled operating mode (TCO) in order to improve the selectivity of the sensor. This approach obtaining multiple data from a single sensor, therefore known as a virtual multisensor, was originally developed for metal oxide sensors but earlier work proved the suitability for MISiC FETs as well. This strategy was now tailored to the quantification of NOx in a mixture of typical exhaust gases (CO, HC, plus NH3). Data was evaluated with multivariate statistics e.g. Linear Discriminant Analysis. In order to suppress the influence of varying background a hierarchical approach was used. Results show that quantification of NOx is possible even in a changing background.
  • Keywords
    field effect transistors; nitrogen compounds; semiconductor device metallisation; silicon compounds; wide band gap semiconductors; MISiC FET; NOx; SiC; catalytic gate metallization; hierarcical strategy; linear discriminant analysis; metal insulator field effect transistors; typical exhaust gases; virtual multisensor; FETs; Gas detectors; Gases; Logic gates; Silicon carbide; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6127046
  • Filename
    6127046