Virtual Gate Large Signal Model of GaN HFETs

This work demonstrates a compact circuit model for GaN HFETs that includes the anomalous transient effect generally referred to as knee voltage walkout. Both the quiescent bias dependence and the time dependence of the transients are included in the model by adding a parasitic transistor in series with the main transistor. The model agrees well with experimental I-V curves and microwave output power versus supply voltage measurements.