Title :
A 26 GHz Integrated Differential DRO Implemented Using SiGe-HBT Technology
Author :
Hamed, Karim W. ; Freundorfer, Alois P. ; Antar, Yahia M M
Author_Institution :
Queen´´s Univ., Kingston
Abstract :
This paper describes for the first time the design and performance characteristics of a new monolithic 26 GHz differential dielectric resonator oscillator (DRO) implemented using the IBM SiGeHP5 process. The proposed DRO integrates a novel coupling mechanism to excite the TE01delta mode of a cylindrical dielectric resonator in the presence of a conducting silicon substrate in close proximity. Experimental results show an oscillation frequency occurring at 25.96 GHz with a single ended output power of -9.49 dBm, and a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier.
Keywords :
Ge-Si alloys; bipolar transistor circuits; dielectric resonator oscillators; microwave oscillators; silicon; IBM SiGeHP5 process; Si; SiGe; SiGe-HBT technology; cylindrical dielectric resonator; differential DRO; differential dielectric resonator oscillator; frequency 26 GHz; microwave oscillator; phase noise; Coupling circuits; Dielectric substrates; Equivalent circuits; Frequency; Military computing; Millimeter wave integrated circuits; Millimeter wave technology; Oscillators; Phase noise; Silicon; Coupling coefficient; DRO; SiGe; Silicon; dielectric resonators; printed dipole; s;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380005
