A 26 GHz Integrated Differential DRO Implemented Using SiGe-HBT Technology

Author

Hamed, Karim W. ; Freundorfer, Alois P. ; Antar, Yahia M M

Author_Institution

Queen´´s Univ., Kingston

fYear

2007

fDate

3-8 June 2007

Firstpage

657

Lastpage

660

Abstract

This paper describes for the first time the design and performance characteristics of a new monolithic 26 GHz differential dielectric resonator oscillator (DRO) implemented using the IBM SiGeHP5 process. The proposed DRO integrates a novel coupling mechanism to excite the TE_01delta mode of a cylindrical dielectric resonator in the presence of a conducting silicon substrate in close proximity. Experimental results show an oscillation frequency occurring at 25.96 GHz with a single ended output power of -9.49 dBm, and a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier.

Keywords

Ge-Si alloys; bipolar transistor circuits; dielectric resonator oscillators; microwave oscillators; silicon; IBM SiGeHP5 process; Si; SiGe; SiGe-HBT technology; cylindrical dielectric resonator; differential DRO; differential dielectric resonator oscillator; frequency 26 GHz; microwave oscillator; phase noise; Coupling circuits; Dielectric substrates; Equivalent circuits; Frequency; Military computing; Millimeter wave integrated circuits; Millimeter wave technology; Oscillators; Phase noise; Silicon; Coupling coefficient; DRO; SiGe; Silicon; dielectric resonators; printed dipole; s;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380005

Filename

4263902