DocumentCode
2967890
Title
Dimensionless parameters of reactive ion etching
Author
McCafferty, Robert H.
Author_Institution
IBM Gen. Technol. Div., Essex Junction, VT, USA
fYear
1989
fDate
22-24 May 1989
Firstpage
754
Lastpage
758
Abstract
The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding the interrelationship of parameters in plasma-driven etching reactions are outlined, and the theory underlying the derivation itself is given
Keywords
semiconductor device manufacture; semiconductor technology; sputter etching; RIE; dimensionless parameters; plasma-driven etching reactions; reactive ion etching; semiconductor manufacturing process; Etching; Logic circuits; Logic gates; Manufacturing processes; Plasma applications; Process control; Radio frequency; Response surface methodology; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location
Houston, TX
Type
conf
DOI
10.1109/ECC.1989.77835
Filename
77835
Link To Document