Title :
A surface-micromachined MEMS acoustic sensor with back-plate anchors of 100 µm depth
Author :
Lee, Jaewoo ; Je, C.H. ; Jeon, J.H. ; Yang, W.S. ; Kim, Jongdae
Author_Institution :
CCMRL, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A surface-micromachined capacitive-type microelectro-mechanical system (MEMS) acoustic sensor with back-plate anchors of 100 μm depth is presented. The sensor is implemented by a simple front-side fabrication process of a Si substrate with a compatibility with a full CMOS process. For only the front-side process, the back-plate anchors are placed under a back-plate and inserted very deeply into the substrate by Deep Reactive-Ion Etching (DRIE), and their upper part is covered with a thick back-plate of 2.9 μm. Also, a diaphragm is composed entirely of standard CMOS process layers for a monolithic integration. It has a diameter of 500 μm and a back chamber depth of around 80 μm. After a sacrificial layer of 2.2 μm is released, the back chamber is realized by XeF2 etcher as well as the back-plate anchors, simultaneously. Thus, it shows a measured zero-bias capacitance (Cmea) of 1.1 pF at 10 kHz and a pull-in voltage (Vpull) of 35.6 V, and an open-circuit sensitivity (S0) of 1.62 mV/Pa on a DC bias of 6 V.
Keywords :
CMOS integrated circuits; acoustic transducers; micromachining; microsensors; sputter etching; CMOS process; DRIE; Si; XeF2 etcher; back-plate anchors; capacitance 1.1 pF; deep reactive-ion etching; depth 100 mum; frequency 10 kHz; front-side fabrication process; front-side process; size 2.2 mum; size 2.9 mum; size 500 mum; surface-micromachined MEMS acoustic sensor; voltage 35.6 V; voltage 6 V; zero-bias capacitance; Acoustic sensors; Etching; Fabrication; Micromechanical devices; Silicon; Surface topography;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127081