• DocumentCode
    296833
  • Title

    Nondestructive evaluation of elastic properties in porous silicon film on Si(100) by the phase velocity scanning of laser interference fringes

  • Author

    Cho, H. ; Sato, H. ; Nishino, H. ; Tsukahara, Y. ; Inaba, M. ; Sato, A. ; Takemoto, M. ; Nakano, S. ; Yamanaka, K.

  • Author_Institution
    Fac. of Sci. & Eng., Aoyama Gakuin Univ., Tokyo, Japan
  • Volume
    1
  • fYear
    1995
  • fDate
    7-10 Nov 1995
  • Firstpage
    757
  • Abstract
    Investigating an attractive application of a porous silicon (PS) film as a micromachine jointing layer, we evaluated elastic properties of the PS film by the analysis of velocity dispersion of surface acoustic waves (SAW). We developed a novel laser ultrasonic method which utilized the laser interference fringes scanned at the phase velocity of the SAW and measured, for the first time, SAW velocity dispersion of the PS film in a dry condition. The phase velocity of the SAW of the PS film was found to decrease with an increase of the porosity. Curve fitting of the measured dispersion to the computed one gave extremely small elastic stiffness of the PS film compared to that of Si wafer. Morphology of pores in the PS film, estimated from a relationship between the porosity and elastic stiffness C44, was found to be an ordered and less open structure
  • Keywords
    elastic moduli measurement; elemental semiconductors; light interferometry; micromechanical devices; porosity; porous materials; semiconductor thin films; silicon; surface acoustic wave signal processing; ultrasonic dispersion; ultrasonic materials testing; ultrasonic velocity measurement; 30 to 90 MHz; SAW; Si; Si (100); curve fitting; dry condition; elastic properties; elastic stiffness; laser interference fringes; laser ultrasonic method; micromachine jointing layer; nondestructive evaluation; phase velocity scanning; pore morphology; porosity; porous Si film; surface acoustic waves; velocity dispersion; Acoustic measurements; Acoustic waves; Dispersion; Interference; Phase measurement; Semiconductor films; Silicon; Surface acoustic waves; Surface morphology; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-2940-6
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1995.495678
  • Filename
    495678