A new physics-based compact model for AlGaN/GaN HFETs

A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations with ATLAS, a commercial simulator, is demonstrated. In addition, the proposed model is shown to compare favorably with popular curve-fitting models of HFET operation.