DocumentCode
296845
Title
Photoacoustic microscopy of epitaxial and ion-doped layers in semiconductors
Author
Burbelo, R.M. ; Kucherov, L. Ya ; Kuzmich, A.G.
Author_Institution
Fac. of Phys., Taras Shevchenko Univ., Kiev, Ukraine
Volume
1
fYear
1995
fDate
7-10 Nov 1995
Firstpage
829
Abstract
The aim of the paper is to present the results of a laser photoacoustic microscopy study applied to subsurface damage visualization and inhomogeneity detection in semiconductor and ceramic materials. For comparison photoelectric microscopy was used
Keywords
acoustic microscopy; crystal defects; elemental semiconductors; ion implantation; photoacoustic effect; semiconductor epitaxial layers; silicon; surface structure; Si; Si wafers; ceramic materials; epitaxial layers; inhomogeneity detection; ion implantation; ion-doped layers; laser photoacoustic microscopy; photoelectric microscopy; semiconductors; subsurface damage visualization; Laser applications; Microscopy; Optical materials; Optical modulation; Semiconductor lasers; Silicon; Surface emitting lasers; Surface topography; Thermoelasticity; Visualization;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location
Seattle, WA
ISSN
1051-0117
Print_ISBN
0-7803-2940-6
Type
conf
DOI
10.1109/ULTSYM.1995.495694
Filename
495694
Link To Document