Title :
Photoacoustic microscopy of epitaxial and ion-doped layers in semiconductors
Author :
Burbelo, R.M. ; Kucherov, L. Ya ; Kuzmich, A.G.
Author_Institution :
Fac. of Phys., Taras Shevchenko Univ., Kiev, Ukraine
Abstract :
The aim of the paper is to present the results of a laser photoacoustic microscopy study applied to subsurface damage visualization and inhomogeneity detection in semiconductor and ceramic materials. For comparison photoelectric microscopy was used
Keywords :
acoustic microscopy; crystal defects; elemental semiconductors; ion implantation; photoacoustic effect; semiconductor epitaxial layers; silicon; surface structure; Si; Si wafers; ceramic materials; epitaxial layers; inhomogeneity detection; ion implantation; ion-doped layers; laser photoacoustic microscopy; photoelectric microscopy; semiconductors; subsurface damage visualization; Laser applications; Microscopy; Optical materials; Optical modulation; Semiconductor lasers; Silicon; Surface emitting lasers; Surface topography; Thermoelasticity; Visualization;
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2940-6
DOI :
10.1109/ULTSYM.1995.495694
