Title :
WE4A: X-Band and Millimeter Wave Devices and Power Amplifiers
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave devices; Millimeter wave technology; PHEMTs; Paper technology; Power amplifiers; Power transmission lines; Propagation losses;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380080