Title :
Multi-level electro-thermal modeling for circuit simulation of packaged power devices
Author :
Castellazzi, A. ; Ciappa, M.
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zurich
Abstract :
This paper explores a coupled electro-thermal modeling approach based on the integration of analytical compact models of semiconductor physics with a distributed three-dimensional description of thermal phenomena. The main motivation for the development of novel approaches resides in the increasing integration level of power components and equipment, which is pushing the validity of essentially-1D compact thermal models (i.e., RC-Networks) to their limit. Distinctive features of the proposed solution are great flexibility as regards the level of detail that needs to be considered (chip, substrate, heat-sink; 2D or 3D) and the suitability to describe diverse aspect-ratios and shapes. The resulting models are apt for use in general purpose circuit simulators (e.g., Saber, Simplorer) and to be coupled with realistic control and drive signals, enabling a more accurate and in-depth characterization of assembled devices.
Keywords :
circuit simulation; power semiconductor devices; semiconductor device models; semiconductor device packaging; thermal analysis; assembled device characterization; circuit simulation; drive signals; multilevel coupled electro-thermal modeling; packaged power devices; semiconductor physics; Analytical models; Assembly; Circuit simulation; Coupled mode analysis; Coupling circuits; Packaging machines; Physics; Semiconductor device packaging; Shape; Substrates;
Conference_Titel :
Control and Modeling for Power Electronics, 2008. COMPEL 2008. 11th Workshop on
Conference_Location :
Zurich
Print_ISBN :
978-1-4244-2550-1
Electronic_ISBN :
978-1-4244-2551-8
DOI :
10.1109/COMPEL.2008.4634675