DocumentCode
2969079
Title
PECVD SiC photonic crystal sensor
Author
Pandraud, G. ; Huang, Y. ; Sarro, P.M. ; Arango, F. Bernal
Author_Institution
DIMES-ECTM, Delft Univ. of Technol., Delft, Netherlands
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
367
Lastpage
370
Abstract
We demonstrate a two-dimensional photonic crystal made of PECVD silicon carbide (SiC) at near-infrared wavelengths. Although the refractive index of SiC is lower than that of a conventional semiconductor such as GaAs or Si, we show that photonic crystals based sensors can be obtained in PECVD SiC. We fabricated photonic crystals experimentally having bandgaps of 200 nm, and estimated their sensitivity to 210 nm/Refractive Index Unit.
Keywords
optical sensors; photonic band gap; photonic crystals; refractive index; semiconductor devices; silicon compounds; SiC; bandgaps; conventional semiconductor; near-infrared wavelengths; refractive index; sensitivity; size 200 nm; two-dimensional photonic crystal; Etching; Optical waveguides; Photonic band gap; Refractive index; Silicon; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6127130
Filename
6127130
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