• DocumentCode
    2969111
  • Title

    Discriminating gas concentrations in extreme temperature environments

  • Author

    Furnival, B.J.D. ; Wright, N.G. ; Horsfall, A.B.

  • Author_Institution
    Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    1044
  • Lastpage
    1047
  • Abstract
    In this paper a Pt/HfO2/SiO2/SiC MIS capacitor is reported, which unlike previously documented Pt/SiO2/SiC and Pd/TiO2/SiO2/SiC devices shows no response to O2 ambients. As a result, if the capacitor is used within a sensor array it could significantly improve selectivity between H2 and O2. The use of SiC as the substrate material also enables this device and the potential array to operate in extreme conditions, where standard electronics fail. Examination of the devices sensing mechanisms reveal that in contrast to previous reports, a positively charged dipole layer is not formed during exposure to O2. Whilst the passivation of trapping states at the SiO2/SiC interface have little influence on the response to either H2 or O2.
  • Keywords
    MIS capacitors; gas sensors; hafnium compounds; platinum; silicon compounds; MIS capacitor; Pt-HfO2-SiO2-SiC; device sensing mechanisms; extreme temperature environments; gas concentrations; Capacitance-voltage characteristics; Capacitors; Hafnium compounds; Sensitivity; Silicon; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6127132
  • Filename
    6127132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2969111