DocumentCode :
2969640
Title :
A low power memory cell design for SEU protection against radiation effects
Author :
Shiyanovskii, Yuriy ; Rajendran, Aravind ; Papachristou, Chris
Author_Institution :
Case Western Reserve Univ., Cleveland, OH, USA
fYear :
2012
fDate :
25-28 June 2012
Firstpage :
288
Lastpage :
295
Abstract :
This paper presents a novel soft error tolerant SRAM cell design based on the concept of partial functional component separation. The design consists of an inner core for data storage, and outer core for data protection and a separate read port. This SRAM cell provides a high level of soft error tolerance with a rather low power consumption penalty in comparison with other hardened SRAM designs. The design was optimized for power consumption, write performance, read stability, and soft error tolerance by selectively varying the physical dimensions of the cores. Temperature dependence and impact of voltage scaling were analyzed for the optimized design.
Keywords :
SRAM chips; integrated circuit design; low-power electronics; radiation effects; SEU protection; data protection; data storage; low power consumption penalty; low power memory cell design; partial functional component separation; radiation effects; read port; read stability; single event upset; soft error tolerance; soft error tolerant SRAM cell design; temperature dependence; voltage scaling impact; write performance; Inverters; MOSFETs; Modulation; Power demand; Random access memory; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Adaptive Hardware and Systems (AHS), 2012 NASA/ESA Conference on
Conference_Location :
Erlangen
Print_ISBN :
978-1-4673-1915-7
Electronic_ISBN :
978-1-4673-1914-0
Type :
conf
DOI :
10.1109/AHS.2012.6268665
Filename :
6268665
Link To Document :
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