DocumentCode :
2969665
Title :
Modeling and quantification of substrate noise induced by interconnects in SOCs
Author :
Aghnout, Soraya ; Masoumi, Nasser
Author_Institution :
Univ. of Tehran, Tehran
fYear :
2007
fDate :
2-5 Sept. 2007
Firstpage :
1
Lastpage :
6
Abstract :
Interconnects carrying high-frequency signals are of the most important sources of substrate noise. This paper computes the amount of the interconnect-induced substrate noise. We develop a substrate extraction tool based on the Finite Difference Method and combine the extracted output model with accurate interconnect models. Through simulation of the complete substrate-interconnect model, we investigate the impacts of frequency and several interconnect geometrical parameters on the amount of the substrate noise.
Keywords :
finite difference methods; integrated circuit interconnections; substrates; system-on-chip; SOC; accurate interconnect models; finite difference method; quantification; substrate extraction; substrate noise; substrate-interconnect model; Capacitance; Circuit noise; Coupling circuits; Finite difference methods; Integrated circuit interconnections; Semiconductor device modeling; Semiconductor device noise; Solid modeling; Substrates; Very large scale integration; Substrate coupling noise; VLSI circuits; capacitive coupling; finite difference method; interconnect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era, 2007. DTIS. International Conference on
Conference_Location :
Rabat
Print_ISBN :
978-1-4244-1277-8
Electronic_ISBN :
978-1-4244-1278-5
Type :
conf
DOI :
10.1109/DTIS.2007.4449482
Filename :
4449482
Link To Document :
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