0.25μm CMOS Dual Feedback Wide-Band UHF Low Noise Amplifier

Author

Lo, Ivy ; Boric-Lubecke, Olga ; Lubecke, Victor

Author_Institution

Hawaii Univ., Honolulu

fYear

2007

fDate

3-8 June 2007

Firstpage

1059

Lastpage

1062

Abstract

This paper presents a CMOS low noise amplifier (LNA) for UHF band applications. By using an inverter to enhance the overall transconductance, and a resistive shunt feedback topology with a source degenerated inductor, a wide bandwidth from 50 MHz to 560 MHz is achieved, with a peak power gain of 13.8 dB. A noise figure of 1.8 to 2.4 dB is obtained in the frequency range of 200 MHz and 1.5 GHz. At 450 MHz, this LNA exhibits IIP3 of 6.15 dBm, and input P1dB of -6 dBm. The LNA is biased at 2.4 V, drawing a current of 14 mA. Compared to other published wide-band LNAs, this amplifier achieves the best linearity for NF below 2.5 dB, with low circuit complexity.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; invertors; low noise amplifiers; CMOS dual feedback low noise amplifier; bandwidth 50 MHz to 560 MHz; current 14 mA; gain 13.8 dB; inverter; noise figure 1.8 dB to 2.4 dB; resistive shunt feedback topology; size 0.25 μm; source degenerated inductor; transconductance; voltage 2.4 V; wide-band UHF low noise amplifier; Bandwidth; Broadband amplifiers; Feedback; Gain; Inductors; Inverters; Low-noise amplifiers; Shunt (electrical); Topology; Transconductance; CMOS; UHF; feedback; high linearity; low noise amplifiers; wide-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0687-0

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380275

Filename

4264009