DocumentCode :
2969747
Title :
Integrated development and manufacturing methodology for advanced power MOSFETs
Author :
Kasem, Mohammed
Author_Institution :
Temic Semicond. (Silconix) Inc., Santa Clara, CA, USA
fYear :
1997
fDate :
13-15 Oct 1997
Firstpage :
20
Lastpage :
24
Abstract :
This paper briefly illustrates the principles of Integrated Product Development (IPD) as an effective framework for new product development. However, the success of management implementing IPD is dependent on a number of fundamental changes in the current development process. These include emphasis on teamwork and the expansion of the role of manufacturing, as well as the application of Design for Manufacturability (DFM) as a business driver. The paper also describes the superior characteristics of 8-lead power TSSOP packages, which were developed for ultra high density Trench MOSFETs using IPD principles
Keywords :
design for manufacture; power MOSFET; product development; semiconductor device packaging; design for manufacturability; integrated product development; power MOSFETs; power TSSOP packages; teamwork; trench MOSFETs; Costs; Design for manufacture; Energy management; Isolation technology; MOSFETs; Manufacturing processes; Product development; Semiconductor device manufacture; Semiconductor device packaging; Teamwork;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International
Conference_Location :
Austin, TX
ISSN :
1089-8190
Print_ISBN :
0-7803-3929-0
Type :
conf
DOI :
10.1109/IEMT.1997.626867
Filename :
626867
Link To Document :
بازگشت