Title :
Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications
Author :
Riemer, Paul J. ; Humble, James S. ; Prairie, Jason F. ; Coker, Jonathan D. ; Randall, Barbara A. ; Gilbert, Barry K. ; Daniel, Erik S.
Author_Institution :
Mayo Clinic, Rochester
Abstract :
We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (PlOdB) of 19.4 dBm and a -1 dB compression point (PldB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; microstrip components; microwave power amplifiers; millimetre wave power amplifiers; power combiners; silicon compounds; 4-way microstrip-based power amplifier; BiCMOS technology; Ka-band SiGe HBT power amplifier; SiGe; bandwidth 4.7 GHz; frequency 200 GHz to 250 GHz; frequency 28 GHz to 33 GHz; heterojunction bipolar transistor; on-chip Wilkinson power combiner; single-chip T-R module application; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; MIM capacitors; Power amplifiers; Power combiners; Power dividers; Radiofrequency amplifiers; Silicon germanium; BiCMOS; HBT; IBM 8HP; Ka-Band; SiGe; Wilkinson power combiner; power amplifier;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380278
