20-Watt LDMOS Power Amplifier IC for Linear Driver Application

Author

Bagger, Reza ; Andersson, Paul ; Shin, C.D.

Author_Institution

Infineon Technol. Nordic AB, Kista

fYear

2007

fDate

3-8 June 2007

Firstpage

1075

Lastpage

1078

Abstract

This paper describes an LDMOS power amplifier integrated circuit for W-CDMA applications. The IC was developed with Infineon´s Si LDMOS IC technology. The PA IC achieved 28.5 dB gain. When tuned for W-CDMA the IC showed 20 W PEP at IM3 = -30 dBc (two-tone), 400-MHz bandwidth (20%) around 2100 MHz, gain flatness of 0.15 dB/30 MHz, and phase flatness of 1 degree/30 MHz. The PA IC was characterized under all typical modulation formats, and is included in Infineon´s product portfolio of power ICs for radio base stations.

Keywords

MOS analogue integrated circuits; circuit tuning; code division multiple access; driver circuits; power amplifiers; Infineon product; LDMOS power amplifier IC; W-CDMA application; bandwidth 400 MHz; circuit tuning; gain 28.5 dB; lateral diffused metal-oxide semiconductor; linear driver application; modulation formats; power 20 W; radio base stations; Application specific integrated circuits; Bandwidth; Driver circuits; Gain; Integrated circuit technology; Modulation; Multiaccess communication; Portfolios; Power amplifiers; Power integrated circuits; Broadband; Driver; IC; LDMOS; Power amplifier; W-CDMA;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380279

Filename

4264013