Applications of GaN HEMTs and SiC MESFETs in High Efficiency Class-E Power Amplifier Design for WCDMA Applications

Author

Lee, Yong-Sub ; Jeong, Yoon-Ha

Author_Institution

Pohang Univ. of Sci. & Technol., Pohang

fYear

2007

fDate

3-8 June 2007

Firstpage

1099

Lastpage

1102

Abstract

This paper presents high efficiency class-E power amplifiers using wide-bandgap devices such as GaN HEMT and SiC MESFET, which are designed at WCDMA band of 2.14 GHz. The output network using transmission lines is implemented to suppress harmonics and minimize losses. Measured results of the class-E power amplifier using wide-bandgap devices for a single tone have been compared to that of the class-E Si LDMOS power amplifier. For GaN HEMT and SiC MESFET cases, the power-added efficiency (PAE) of 70% with a gain of 13.0 dB and 72.3% with a gain of 10.3 dB are achieved at an output power of 43.0 dBm and 40.3 dBm, respectively, through significant reduction of harmonic power levels.

Keywords

MOS integrated circuits; Schottky gate field effect transistors; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; GaN; HEMT; MESFET; PAE; Schottky gate field effect transistors; SiC; WCDMA; class-E power amplifier; frequency 2.14 GHz; gain 10.3 dB; gain 13.0 dB; harmonics suppression; high electron mobility transistors; power-added efficiency; Broadband amplifiers; Gain; Gallium nitride; HEMTs; High power amplifiers; MESFETs; MODFETs; Multiaccess communication; Power amplifiers; Silicon carbide; Class-E power amplifier; GaN HEMT; Si LDMOS; SiC MESFET; power added efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380285

Filename

4264019