Title :
Soft breakdown model of 20 Å gate oxide
Author :
Ko, Chin-Yuan ; Shiue, R.Y. ; Yue, J.
Author_Institution :
Dept. of Reliability Assurance, Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
In this work, we apply percolation concepts and point contact concept to explain almost all the soft breakdown (SB) phenomenon of 20 Å gate oxide, and this is the first time to combine theses two theory to model the ultra-thin oxide soft breakdown mechanism. Percolation model is a approach based on statistics; whereas, point contact interpret SB phenomena in view of physics. Statistical approach can explain statistical properties, and physical approach can explain physical features. By proving the conduction after SB is dominated by ballistic transport, we can explain two-level fluctuation by means of point contact
Keywords :
MOS capacitors; percolation; point contacts; semiconductor device breakdown; 20 angstrom; MOS capacitor; SiO2; ballistic transport; electrical conduction; percolation model; point contact; soft breakdown; statistical properties; two-level fluctuation; ultrathin gate oxide; Charge measurement; Conductors; Current measurement; Dielectric breakdown; Electric breakdown; Electrons; Semiconductor device breakdown; Stress measurement; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911899
