Title :
Improving the accuracy of “Shift and Ratio” channel length extraction method in deep submicron technology
Author :
Ye, Qiuyi ; Li, Yujun ; Tonti, W. ; Berry, W. ; Parks, C. ; Mohler, R.
Author_Institution :
Infineon Technol., Hopewell Junction, NY, USA
Abstract :
An improvement over the existing “Shift and Ratio” (S&R) algorithm for extracting effective channel length (Leff ) in deep submicrometer MOSFETs has been developed. This electrical to physical correlation is needed in order to assess MOSFET reliability over the channel length spectrum. The limitations of S&R algorithm are discussed in the context of independent technologies. A correction factor is introduced and has been shown to improve the widely used S&R technique
Keywords :
MOSFET; carrier mobility; semiconductor device models; semiconductor device reliability; MOSFET reliability; S&R algorithm; channel length extraction method; correction factor; deep submicron technology; electrical to physical correlation; independent technologies; shift and ratio method; Data mining; Electric variables measurement; Fabrication; Implants; MOSFET circuits; Microelectronics; Random access memory; Research and development; Rivers; Thickness measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911910
