Automated MOS transistor degradation measurements based on labVIEW

Author

Oussalah, Slimane ; Djezzar, Boualem

Author_Institution

Centre de Dev. des Technol. Avancees, Algiers

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

217

Lastpage

220

Abstract

The LabVIEW system suitability for a device research laboratory is evaluated in this paper. The system is applied successfully to the study of MOSFET device degradation under low radiation doses with the highly repetitive measurement using the well known charge pumping technique. Radiation-induced threshold voltage shift (DeltaV_TH), radiation-induced flatband voltage shift (DeltaV_FB), radiation-induced oxide-trap (DeltaN_OT); and radiation-induced interface-trap (DeltaN_IT) are extracted. The irradiated MOSFET transistors are characterized with the developed software.

Keywords

MOSFET; computerised instrumentation; semiconductor devices; LabVIEW; MOSFET device degradation; automated MOS transistor; charge pumping; degradation measurements; low radiation doses; radiation-induced flatband voltage shift; radiation-induced interface-trap; radiation-induced oxide-trap; radiation-induced threshold voltage shift; Application software; Automatic control; Circuit testing; Control systems; Degradation; Instruments; Integrated circuit reliability; Laboratories; MOSFET circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era, 2007. DTIS. International Conference on

Conference_Location

Rabat

Print_ISBN

978-1-4244-1277-8

Electronic_ISBN

978-1-4244-1278-5

Type

conf

DOI

10.1109/DTIS.2007.4449523

Filename

4449523