DocumentCode :
2970514
Title :
Automated MOS transistor degradation measurements based on labVIEW
Author :
Oussalah, Slimane ; Djezzar, Boualem
Author_Institution :
Centre de Dev. des Technol. Avancees, Algiers
fYear :
2007
fDate :
2-5 Sept. 2007
Firstpage :
217
Lastpage :
220
Abstract :
The LabVIEW system suitability for a device research laboratory is evaluated in this paper. The system is applied successfully to the study of MOSFET device degradation under low radiation doses with the highly repetitive measurement using the well known charge pumping technique. Radiation-induced threshold voltage shift (DeltaVTH), radiation-induced flatband voltage shift (DeltaVFB), radiation-induced oxide-trap (DeltaNOT); and radiation-induced interface-trap (DeltaNIT) are extracted. The irradiated MOSFET transistors are characterized with the developed software.
Keywords :
MOSFET; computerised instrumentation; semiconductor devices; LabVIEW; MOSFET device degradation; automated MOS transistor; charge pumping; degradation measurements; low radiation doses; radiation-induced flatband voltage shift; radiation-induced interface-trap; radiation-induced oxide-trap; radiation-induced threshold voltage shift; Application software; Automatic control; Circuit testing; Control systems; Degradation; Instruments; Integrated circuit reliability; Laboratories; MOSFET circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era, 2007. DTIS. International Conference on
Conference_Location :
Rabat
Print_ISBN :
978-1-4244-1277-8
Electronic_ISBN :
978-1-4244-1278-5
Type :
conf
DOI :
10.1109/DTIS.2007.4449523
Filename :
4449523
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2970514
بازگشت