DocumentCode :
2970530
Title :
A study of IR-drop noise issues in 3D ICs with through-silicon-vias
Author :
Jung, Moongon ; Lim, Sung Kyu
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
16-18 Nov. 2010
Firstpage :
1
Lastpage :
7
Abstract :
With the extensive research on through-silicon-via (TSV) and die-stacking technology from both academia and industry, mainstream production of 3D ICs is expected in a near future. However, power delivery is believed to be one of the most challenging problems in 3D ICs. A main objective of the 3D power/ground (P/G) network optimization is to minimize the usage of P/G TSVs while satisfying power supply noise constraint. P/G TSVs consume a considerable amount of routing resources unless designed carefully. In this work, we first investigate the impact of P/G TSVs on the power supply noise as well as 3D IC layouts. We perform sign-off static IR-drop analysis on GDSII layouts of 2D and 3D IC designs using commercial-grade tools. We also explore the impact of 3D P/G network topology on IR-drop by varying P/G TSV pitch. Next, we propose a non-regular P/G TSV placement algorithm to further reduce the number of P/G TSVs used while satisfying the given IR-drop noise requirement. Compared with the conventional regular structure, our non-regular P/G TSV placement algorithm reduces the P/G TSV count, wirelength, and footprint area by 59.3%, 3.4%, and 3.5% on average, respectively.
Keywords :
equivalent circuits; integrated circuit noise; power aware computing; three-dimensional integrated circuits; 3D IC; IR-drop noise; TSV; die-stacking technology; equivalent circuits; power delivery; power supply noise constraint; power/ground network optimization; sign-off static IR-drop analysis; through-silicon-vias; Integrated circuit modeling; Layout; Logic gates; Noise; Routing; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0526-7
Type :
conf
DOI :
10.1109/3DIC.2010.5751462
Filename :
5751462
Link To Document :
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