DocumentCode :
2970538
Title :
Effects of RTA and WSix-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs
Author :
Park, Donggun ; Son, Nak-Jin ; Kim, Ji-Young ; Lee, Wonshik
fYear :
2000
fDate :
2000
Firstpage :
125
Lastpage :
128
Abstract :
We report the process effects on the MOSFET reliability and characteristics for the gate stack formation process in DRAM (Dynamic Random Access Memory). A rapid thermal annealing (RTA) process, employed for the reduction of word-line resistance and the improvement of hot-carrier life-time, caused an increase of the gate-induced drain leakage (GIDL) current. WSix gate dependence, Hot-Carrier (HC) and Fowler-Nordheim (FN) stress effects are also studied
Keywords :
DRAM chips; MOSFET; carrier lifetime; hot carriers; leakage currents; rapid thermal annealing; semiconductor device metallisation; semiconductor device reliability; tungsten compounds; DRAM; Fowler-Nordheim stress; MOSFET reliability; WSi; WSix polycide gate; gate stack formation; gate-induced drain leakage current; hot carrier lifetime; rapid thermal annealing; word-line resistance; Conductivity; Electrical resistance measurement; Electrodes; Fabrication; Hot carriers; Leakage current; MOSFET circuits; Random access memory; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
Type :
conf
DOI :
10.1109/IRWS.2000.911918
Filename :
911918
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2970538
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