DocumentCode
2970717
Title
Off-state-degradation of 170 nm and 140 nm buried LDD pMOSFETs with different HALO implants
Author
Holzhauser, S. ; Narr, A.
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2000
fDate
2000
Firstpage
158
Lastpage
160
Abstract
In this work we present an experimental analysis of the transistor parameter degradation for pMOS devices operating in the off-state-mode. The parameter degradation is investigated for devices with different HALO implants. The reason for the parameter degradation and the location of the damage which causes the parameter shift of the transistor is discussed. Finally the influence of the HALO implant on the device lifetime is presented
Keywords
MOSFET; buried layers; ion implantation; leakage currents; 140 nm; 170 nm; HALO implantation; buried LDD pMOSFET; device lifetime; leakage current; off-state mode; transistor parameter degradation; Circuits; Degradation; Diodes; Implants; Leakage current; MOS devices; MOSFETs; Microelectronics; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-6392-2
Type
conf
DOI
10.1109/IRWS.2000.911928
Filename
911928
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