• DocumentCode
    2970731
  • Title

    The effect of hydrogen-radical annealing for SiO2 passivation

  • Author

    Nagayoshi, H. ; Yamaguchi, M. ; Yamamoto, Y. ; Ikeda, Makoto ; Saitoh, T. ; Kamisako, K. ; Uematsu, T.

  • Author_Institution
    Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Dec 1994
  • Firstpage
    1513
  • Abstract
    The reduction of recombination velocity is important in obtaining high-efficiency solar cells, and SiO2 passivation and hydrogen post-annealing are therefore widely used as surface passivation techniques. This investigation of hydrogen-radical post-annealing using the microwave hydrogen afterglow method shows that this procedure increases the effective lifetime of silicon wafers with SiO2 passivation layers with a very short annealing time to a degree greater than does 3% H2 forming gas annealing
  • Keywords
    annealing; electron-hole recombination; elemental semiconductors; high-frequency discharges; passivation; semiconductor materials; silicon; silicon compounds; solar cells; H2; Si; SiO2; SiO2 passivation; high-efficiency solar cells; hydrogen-radical annealing; microwave hydrogen afterglow method; recombination velocity reduction; silicon wafer lifetime improvement; surface passivation; Annealing; Atomic layer deposition; Atomic measurements; Etching; Hydrogen; Microwave technology; Microwave theory and techniques; Passivation; Photovoltaic cells; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1460-3
  • Type

    conf

  • DOI
    10.1109/WCPEC.1994.520500
  • Filename
    520500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2970731