Title :
A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station
Author :
Ui, Norihiko ; Sano, Hiroaki ; Sano, Seigo
Author_Institution :
Eudyna Devices Inc. Yamanashi Plant, Yamanashi
Abstract :
A 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-stage amplifier up with the 30 W driver stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
Keywords :
HEMT circuits; HEMT integrated circuits; III-V semiconductors; UHF power amplifiers; code division multiple access; digital radio; driver circuits; gallium compounds; high electron mobility transistors; 2-stage saturation power HEMT Doherty amplifier; ACLR; GaN; W-CDMA base station; back-off power; digital pre-distortion; drain efficiency; driver stage amplifier; efficiency 42 percent; gain 32 dB; power 30 W; power 450 W; power 80 W; Base stations; Circuit simulation; Driver circuits; Gallium nitride; HEMTs; Multiaccess communication; Peak to average power ratio; Power amplifiers; Pulse amplifiers; Radiofrequency amplifiers; Doherty; GaN HEMT; digital pre-distortion(DPD);
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380421
