DocumentCode
2970845
Title
Methods for increasing burn in efficiency for DRAMs
Author
Nierle, Klaus ; Norris, Alan
Author_Institution
Infineon Technol., Essex Junction, VT, USA
fYear
2000
fDate
2000
Firstpage
183
Lastpage
184
Abstract
Randomly distributed process defects are the major contributor to semiconductor component reliability failures. DRAM manufacturers rely on module burn-in (BI) to achieve required field failure rates. In this paper, we describe the implementation of Static BI concept which allows for activation of multiple word lines while leaving sense amps set to avoid the conventional BI problems
Keywords
DRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; DRAM; burn-in efficiency; failure analysis; multiple word lines; process defect; reliability testing; semiconductor component; Bismuth; Costs; Random access memory; Rivers; Semiconductor device manufacture; Semiconductor device reliability; Stress; Temperature; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-6392-2
Type
conf
DOI
10.1109/IRWS.2000.911935
Filename
911935
Link To Document