Title :
Comparison of two standard WLR current-ramped tests for oxide reliability
Author :
Lanchava, B. ; Baumgartner, P. ; Martin, A. ; Beyer, A. ; Mueller, E.
Author_Institution :
Infineon Technol. AG, Regensburg, Germany
Abstract :
A comparison between the GOX-Reliability results obtained on 7.5 nm and 12 nm thick gate oxides (GOX) using two different wafer level reliability current ramp algorithms-a CSQ (Current Step Qbd) stress on the one hand and the JEDEC J-Ramp, on the other hand-are presented. The observed influence of the ramping profile and the step holding time t step on the reliability data shows a strong dependence on the type of device under test (DUT). The P-type MOS-devices seem to be more susceptible to the changes of the current ramping rate. The obtained results are discussed in terms of the GOX interface roughness, depletion effects during the stress, and the serial resistance of the test structure
Keywords :
MOSFET; semiconductor device reliability; semiconductor device testing; 12 nm; 7.5 nm; CSQ stress; JEDEC J-Ramp; P-type MOS transistor; current ramp algorithm; depletion effects; device under test; gate oxide reliability; interface roughness; serial resistance; step holding time; wafer-level testing; Acceleration; Atomic force microscopy; Breakdown voltage; Design for quality; Electric breakdown; Electrical resistance measurement; Life estimation; Stress; Testing; Voltage measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911936
