Title :
Method for the extraction of extrinsic data for oxide quality assessment
Author :
Martin, Andreas ; Diestel, Gunnar
Author_Institution :
Infineon Technol. AG, Muenchen, Germany
Abstract :
In this paper, a method for an oxide quality assessment based on constant stress for intrinsic and ramped stress for extrinsic oxide properties is presented. The significance of this work is the short qualification cycle and the possibility of performing extrinsic lifetime projections at any time during production
Keywords :
MOSFET; semiconductor device reliability; semiconductor device testing; MOS transistor; constant stress; extrinsic properties; intrinsic properties; lifetime projection; oxide quality assessment; parameter extraction; qualification cycle; ramped stress; reliability testing; Data mining; Design for quality; Electric breakdown; Leakage current; Performance evaluation; Qualifications; Quality assessment; Stress measurement; Testing; Time measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911937
