DocumentCode :
2970910
Title :
Additive interconnect fabrication by picosecond Laser Induced Forward Transfer
Author :
Oosterhuis, G. ; in´t Veld, B.H. ; Ebberink, G. ; del Cerro, Daniël Arnaldo ; Van den Eijnden, Edwin ; Chall, Peter ; van der Zon, Ben
Author_Institution :
TNO Sci. & Ind., Eindhoven, Netherlands
fYear :
2010
fDate :
16-18 Nov. 2010
Firstpage :
1
Lastpage :
5
Abstract :
Laser Induced Forward Transfer (LIFT) is a single step, dry deposition process which shows great potential for interconnect fabrication. TNO, in cooperation with ALSI and University of Twente have studied the feature size and resistivity of copper structures deposited using picosecond (ps) LIFT. Small droplets are generated in response to single pulses at high repetition rate (400kHz). It has been shown that with a relatively simple setup, very promising features could be realized. These first results justify further development of the process towards industrial application.
Keywords :
copper; electrical resistivity; integrated circuit interconnections; laser materials processing; Cu; copper structures; dry deposition process; feature size; frequency 400 kHz; interconnect fabrication; picosecond LIFT; picosecond laser induced forward transfer; resistivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0526-7
Type :
conf
DOI :
10.1109/3DIC.2010.5751481
Filename :
5751481
Link To Document :
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