Title :
Process steps impact on electrical and electromigration performances of dual damascene copper
Author :
Gonella, R. ; Torres, J. ; Motte, P. ; van der Vegt, E. ; Gilet, J.M.
Author_Institution :
Central R&D Labs., STMicroelectron., Crolles, France
Abstract :
The impact of IC fabrication process steps on electrical and reliability characteristics of dual damascene copper interconnects has been analyzed. It is demonstrated that thermal treatments could have a negative impact on electrical performances unless a suitable encapsulation step of copper lines is performed. Electromigration performances are also strongly affected by annealing and the role that impurities have in dominating the diffusion paths is evidenced by experiments on differently fabricated copper structures of various widths
Keywords :
annealing; copper; diffusion; electromigration; encapsulation; integrated circuit interconnections; integrated circuit reliability; Cu; IC fabrication; annealing; copper dual damascene interconnect; electrical characteristics; electromigration; encapsulation; impurity diffusion; metal line; reliability; thermal treatment; Annealing; Conductivity; Copper; Electric resistance; Electromigration; Encapsulation; Impurities; Metallization; Silicon compounds; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-6392-2
DOI :
10.1109/IRWS.2000.911939
