Process steps impact on electrical and electromigration performances of dual damascene copper

Author

Gonella, R. ; Torres, J. ; Motte, P. ; van der Vegt, E. ; Gilet, J.M.

Author_Institution

Central R&D Labs., STMicroelectron., Crolles, France

fYear

2000

fDate

2000

Firstpage

191

Lastpage

192

Abstract

The impact of IC fabrication process steps on electrical and reliability characteristics of dual damascene copper interconnects has been analyzed. It is demonstrated that thermal treatments could have a negative impact on electrical performances unless a suitable encapsulation step of copper lines is performed. Electromigration performances are also strongly affected by annealing and the role that impurities have in dominating the diffusion paths is evidenced by experiments on differently fabricated copper structures of various widths

Keywords

annealing; copper; diffusion; electromigration; encapsulation; integrated circuit interconnections; integrated circuit reliability; Cu; IC fabrication; annealing; copper dual damascene interconnect; electrical characteristics; electromigration; encapsulation; impurity diffusion; metal line; reliability; thermal treatment; Annealing; Conductivity; Copper; Electric resistance; Electromigration; Encapsulation; Impurities; Metallization; Silicon compounds; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2000 IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-6392-2

Type

conf

DOI

10.1109/IRWS.2000.911939

Filename

911939