Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design

Author

Reuter, R. ; Li, H. ; To, I. ; Yin, Y. ; Ghazinour, A. ; Jahn, D. ; Morgan, D. ; Feige, J. ; Welch, P. ; Braithwaite, S. ; Knappenberger, B. ; Scheitlin, D. ; John, J. ; Huang, M. ; Wennekers, P. ; Tutt, M. ; Trigas, C. ; Kirchgessner, J.

Author_Institution

Freescale GmbH, Munich

fYear

2007

fDate

3-8 June 2007

Firstpage

1307

Lastpage

1310

Abstract

Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wide temperature range operations. The TX chips consists of a VCO with two stage power amplifier, frequency divider chain, power detector circuit and operational amplifier to on-chip compensate the temperature drift of the center frequency. The RX chips is based on a 38.25 GHz doubler, a 76.5 GHz LNA, a passive balun, a fully balanced mixer and IF buffer. Also the integration and combination with planar patched antennas on a demonstrator board was discussed.

Keywords

BiCMOS analogue integrated circuits; CW radar; FM radar; Ge-Si alloys; power amplifiers; radar receivers; radar transmitters; road vehicle radar; BiCMOS circuits; FMCW automotive radar system; IF buffer; RX chips; SiGe; TX chips; VCO; demonstrator board design; frequency 38.25 GHz; frequency 76.5 GHz; frequency divider chain; fully balanced mixer; fully integrated receiver/transmitter circuits; operational amplifier; passive balun; power amplifier; power detector circuit; Automotive engineering; Frequency conversion; Germanium silicon alloys; Integrated circuit technology; Operational amplifiers; Power amplifiers; Radar; Silicon germanium; Temperature distribution; Transmitters; Antenna arrays; FM radar; antenna measurements; receivers; transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380434

Filename

4264073