DocumentCode :
2971104
Title :
Raman scattering in ZnMnO prepared by ion implantation
Author :
Zhong, Hongmei ; Wang, Jinbin ; Li, Zhifeng ; Chen, Xiaoshuang ; Xu, Wenlan ; Lu, Wei ; Shen, S.C.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China
Volume :
2
fYear :
2005
fDate :
19-23 Sept. 2005
Firstpage :
343
Abstract :
ZnMnO has been successfully prepared by high-dose Mn implantation into ZnO crystal. The influence of implantation and annealing on ZnMnO Raman spectra has been investigated. The E2 mode weakens, broadens and red-shifts after the implantation, while the A1(LO) mode intensifies, broadens and red-shifts. After thermal annealing a new mode at 528 cm-1 shows up. With the recursion method calculation this new mode is attributed to the softening of Zn-O vibration caused by Mn incorporation.
Keywords :
II-VI semiconductors; Raman spectra; annealing; ion implantation; manganese; materials preparation; semiconductor doping; soft modes; zinc compounds; Raman scattering; Raman spectra; ZnMnO; ZnO; high-dose ion implantation; mode softening; recursion method calculation; thermal annealing; Annealing; Impurities; Laboratories; Magnetic materials; Phonons; Physics; Raman scattering; Softening; Spectroscopy; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
Type :
conf
DOI :
10.1109/ICIMW.2005.1572553
Filename :
1572553
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2971104
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