DocumentCode :
2971367
Title :
Ultra sensitive ErAs/InAlGaAs direct detectors for millimeter wave and THz imaging applications
Author :
Kazemi, H. ; Nagy, G. ; Tran, L. ; Grossman, E. ; Brown, E.R. ; Gossard, A.C. ; Boreman, G.D. ; Lail, B. ; Young, A.C. ; Zimmerman, J.D.
Author_Institution :
Teledyne Sci. Co., Thousand Oaks
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1367
Lastpage :
1370
Abstract :
A new class of zero bias, room temperature ultra sensitive detectors have been introduced for detection of millimeter wave radiation. The detectors have been scaled to micron level and have shown record responsivity in three forms. A W-band waveguide detector was designed and measured to have 4500 V/W voltage responsivity. A planar antenna coupled detector was also evaluated with and measured a responsivity 16100 V-mm2/W from 75-110 GHz. Following a resonant impedance matching technique an on-wafer characterization have shown voltage responsivity to exceed 20,000 V/W. The result does not include the reflected power from the detector and have shown that these detectors could provide noise equivalent power (NEP) values in the 4times10-13 W/ radicHz level.
Keywords :
Schottky diodes; aluminium compounds; erbium compounds; gallium arsenide; impedance matching; indium compounds; millimetre wave detectors; millimetre wave imaging; planar antennas; submillimetre wave detectors; submillimetre wave imaging; ErAs-InAlGaAs; Schottky diode; THz imaging; W-band waveguide detector; frequency 75 GHz to 110 GHz; millimeter wave imaging; millimeter wave radiation detection; noise equivalent power; on-wafer characterization; planar antenna coupled detector; resonant impedance matching technique; room temperature ultra sensitive detectors; ultrasensitive direct detector; Antenna measurements; Impedance matching; Millimeter wave measurements; Millimeter wave technology; Noise level; Planar arrays; Radiation detectors; Resonance; Temperature sensors; Voltage; ErAs; InGaAs; Millimeter wave imager; Schottky diode; W-band; direct detection; rectifier diode; responsivity; sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380467
Filename :
4264089
Link To Document :
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