Title :
The structure, phase transformation and electrical properties of a new cadmium antimony oxide semiconductive ceramics
Author :
Zhang Jin-Li ; Biao-Rong, Li ; Jin Qi-Lu
Author_Institution :
Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
A cadmium-antimony-oxide semiconductor ceramic synthesized by heating CdO and Sb2O5 is discussed. Its composition, structure, phase transition, and electrical properties have been systematically studied. The study indicates that the material is an n-type semiconductor, Cd6Sb2O10. A reversible structural phase transformation occurs at about 240°C. The transition temperature of the heating and cooling processes are 246°C and 228°C, respectively. The R-T curves can be divided into three temperature regions. The conduction mechanism in the three regions and the associated defect structure and phase transformation properties are discussed. The activation energy and carrier mobilities are calculated
Keywords :
antimony compounds; cadmium compounds; carrier mobility; ceramics; electrical conductivity of crystalline semiconductors and insulators; solid-state phase transformations; ternary semiconductors; 228 degC; 240 degC; 246 degC; Cd6Sb2O10; CdO; R-T curves; Sb2O5; activation energy; carrier mobilities; ceramic semiconductor; conduction mechanism; cooling; defect structure; electrical properties; heating; n-type; phase transformation; phase transition; reversible structural phase transformation; transition temperature; Cadmium compounds; Ceramics; Chemical analysis; Conductivity; Heating; Mechanical factors; Optical sensors; Plasma temperature; Raw materials; X-ray diffraction;
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
DOI :
10.1109/ECC.1989.77855
