The structure, phase transformation and electrical properties of a new cadmium antimony oxide semiconductive ceramics

Author

Zhang Jin-Li ; Biao-Rong, Li ; Jin Qi-Lu

Author_Institution

Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

1989

fDate

22-24 May 1989

Firstpage

909

Lastpage

912

Abstract

A cadmium-antimony-oxide semiconductor ceramic synthesized by heating CdO and Sb₂O₅ is discussed. Its composition, structure, phase transition, and electrical properties have been systematically studied. The study indicates that the material is an n-type semiconductor, Cd₆Sb₂O₁₀. A reversible structural phase transformation occurs at about 240°C. The transition temperature of the heating and cooling processes are 246°C and 228°C, respectively. The R-T curves can be divided into three temperature regions. The conduction mechanism in the three regions and the associated defect structure and phase transformation properties are discussed. The activation energy and carrier mobilities are calculated

Keywords

antimony compounds; cadmium compounds; carrier mobility; ceramics; electrical conductivity of crystalline semiconductors and insulators; solid-state phase transformations; ternary semiconductors; 228 degC; 240 degC; 246 degC; Cd₆Sb₂O₁₀; CdO; R-T curves; Sb₂O₅; activation energy; carrier mobilities; ceramic semiconductor; conduction mechanism; cooling; defect structure; electrical properties; heating; n-type; phase transformation; phase transition; reversible structural phase transformation; transition temperature; Cadmium compounds; Ceramics; Chemical analysis; Conductivity; Heating; Mechanical factors; Optical sensors; Plasma temperature; Raw materials; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components Conference, 1989. Proceedings., 39th

Conference_Location

Houston, TX

Type

conf

DOI

10.1109/ECC.1989.77855

Filename

77855