Title :
Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching
Author :
Kondo, T. ; Hirakawa, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.
Keywords :
high electron mobility transistors; high-speed optical techniques; optical modulation; submillimetre wave transistors; submillimetre waves; drain-source current; high electron mobility transistors; network analyzer; terahertz radiation; ultrafast modulation; ultrafast optical gate switching; ultrafast optical gate-field modulation; ultrahigh-speed transistors; Electron optics; HEMTs; Laser excitation; Laser mode locking; MODFETs; Optical modulation; Optical pulses; Pulse measurements; Transmission line measurements; Ultrafast optics;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572611
