DocumentCode
2972209
Title
Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching
Author
Kondo, T. ; Hirakawa, K.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
Volume
2
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
459
Abstract
We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.
Keywords
high electron mobility transistors; high-speed optical techniques; optical modulation; submillimetre wave transistors; submillimetre waves; drain-source current; high electron mobility transistors; network analyzer; terahertz radiation; ultrafast modulation; ultrafast optical gate switching; ultrafast optical gate-field modulation; ultrahigh-speed transistors; Electron optics; HEMTs; Laser excitation; Laser mode locking; MODFETs; Optical modulation; Optical pulses; Pulse measurements; Transmission line measurements; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572611
Filename
1572611
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