600 GHz GaAs Schottky diode mixer in split-block technology

Author

Schur, J. ; Biber, S. ; Cojocari, O. ; Schmidt, L.P. ; Hartnagel, H.L.

Author_Institution

Inst. for Microwave Technol., Erlangen Univ., Germany

Volume

2

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

469

Abstract

In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this mixer design are compared. The overall performance of the waveguide mixer is demonstrated by measurements of the mixer in a quasi-optical setup at 600 GHz. In this setup we are able to measure single sideband conversion losses of 9-14 dB at 600 GHz and voltage responsivities of 421-1690 mV/mW.

Keywords

III-V semiconductors; Schottky diode mixers; gallium arsenide; micromachining; quartz; submillimetre wave mixers; waveguide components; 600 GHz; 9 to 14 dB; GaAs-SiO₂; Schottky diode mixer; mixer design; single sideband conversion losses; split-block technology; split-block waveguide mixer; Extraterrestrial measurements; Frequency; Gallium arsenide; Horn antennas; Microwave technology; Milling; Parasitic capacitance; Schottky diodes; Semiconductor diodes; Substrates; 600 GHz; GaAs Schottky diode; THz-technology; heterodyne mixer; micromachining; split-block;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572616

Filename

1572616