DocumentCode :
2972433
Title :
Industry First 100W Two-Stage RFIC for 900MHz GSM EDGE Base Station Applications
Author :
Moronval, Xavier ; Peyrot, Pascal
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
1585
Lastpage :
1588
Abstract :
During the past years, high power RFICs have entered the base station arena. Their primary function was to serve as drivers for the final stages, exclusively composed up to now of conventional discrete transistors. The Silicon RFIC described in this paper is the first that is intended to serve as a final stage and the first to demonstrate an output power level of 100 W CW. It is designed for the 900 MHz GSM EDGE base station market, for which it enables new perspectives in terms of superior RF performance, low cost and ease of use capabilities.
Keywords :
cellular radio; power amplifiers; radiofrequency integrated circuits; GSM EDGE base station; RFIC; conventional discrete transistors; frequency 900 MHz; power 100 W; power amplifiers; Base stations; Costs; GSM; Integrated circuit technology; Plastic packaging; Power amplifiers; Power generation; Radio frequency; Radiofrequency integrated circuits; Silicon; EDGE; GSM; LDMOS; Power amplifiers; RFIC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.379987
Filename :
4264148
Link To Document :
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