1KW Push-Pull High Efficiency RF BJT Transistor for Radar Applications

Author

Shi, Tiefeng ; Chang, Jerry ; Leverich, Lyle ; Mallinger, Mike ; Leader, Charlie

Author_Institution

Microsemi Corp., Santa Clara

fYear

2007

fDate

3-8 June 2007

Firstpage

1593

Lastpage

1596

Abstract

The performance of a 1kW push-pull device using state of the art silicon die technology is described. Operating under pulsed RF conditions of 300 mus pulse width, 10% duty cycle, it can deliver 1kW peak power at 40 V, and at 1.1 ms 26% 32 V, it can deliver 500 W peak power. More than 60% efficiency at 450 MHz is attained and 10 dB gain over the bandwidth 400 - 450 MHz is achieved. Thermal resistance is 0.07degC/W and 0.2 TC/W respectively. The junction temperature remains below 150degC at a flange temperature of 70degC. This combination of high power and high efficiency makes these devices ideally suited for transmitter designs in UHF radar systems.

Keywords

UHF bipolar transistors; power bipolar transistors; radar transmitters; thermal resistance; UHF radar systems; frequency 400 MHz to 450 MHz; gain 10 dB; junction temperature; power 1 kW; power 500 W; push-pull high efficiency RF BJT transistor; silicon die technology; temperature 70 degC; thermal resistance; transmitter; voltage 32 V; voltage 40 V; Bandwidth; Flanges; Gain; Radar applications; Radio frequency; Silicon; Space vector pulse width modulation; Temperature; Thermal resistance; Transmitters; BJT; High Power Transistor; Radar applications; UHF;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.379989

Filename

4264150