94-GHz Band High-Gain and Low-Noise Amplifier Using InP-HEMTs for Passive Millimeter Wave Imager

Author

Sato, M. ; Hirose, T. ; Ohki, T. ; Sato, H. ; Sawaya, K. ; Mizuno, K.

Author_Institution

Fujitsu Ltd., Atsugi

fYear

2007

fDate

3-8 June 2007

Firstpage

1775

Lastpage

1778

Abstract

This paper describes 94-GHz band low-noise and high-gain amplifier MMICs using InP HEMTs, which have been developed for passive millimeter-wave (PMMW) imaging. To achieve a high gain with low noise performance, we propose a new stabilizing technique for the amplifier. The measured noise figure was 3.2 dB and the gain was 33 dB. In addition, we developed a PMMW imager using this amplifier. We also demonstrated an example of a millimeter-wave image acquired by the PMMW imager.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; low noise amplifiers; millimetre wave imaging; HEMT; InP; MMIC; frequency 94 GHz; gain 33 dB; high-gain amplifier; low-noise amplifier; noise figure; noise figure 3.2 dB; passive millimeter wave imaging; stabilizing technique; Gain measurement; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; MODFETs; Millimeter wave measurements; Millimeter wave technology; Noise measurement; Performance gain; Amplifier; HEMT; gain; microstrip; millimeter wave imaging; noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380074

Filename

4264199