Optimizing MOM diode performance via the oxidation technique

This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiO_x/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V^-1 unbiased, 15 V^-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.