DocumentCode
2973543
Title
Optimizing MOM diode performance via the oxidation technique
Author
Dodd, Linzi E. ; Wood, David ; Gallant, Andrew J.
Author_Institution
Sch. of Eng. & Comput. Sci., Durham Univ., Durham, UK
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
176
Lastpage
179
Abstract
This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.
Keywords
curve fitting; platinum; semiconductor diodes; titanium compounds; AFM analysis; I-V characteristics; MOM diode performance; RBS analysis; Ti-TiOx-Pt; curve fitting method; electrical performance; fabrication process; mathematical analysis; oxidation technique; zero bias; Fabrication; Gold; Oxidation; Polynomials; Resistance; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6127347
Filename
6127347
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