DocumentCode
2973642
Title
High-Cycle Life Testing of RF MEMS Switches
Author
Goldsmith, C.L. ; Forehand, D.I. ; Peng, Z. ; Hwang, J. C M ; Ebel, John L.
Author_Institution
MEMtronics Corp., Plano
fYear
2007
fDate
3-8 June 2007
Firstpage
1805
Lastpage
1808
Abstract
RF MEMS capacitive switches capable of order-of-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration leads credence to the mechanical robustness of RF MEMS switches.
Keywords
life testing; microswitches; reliability; RF MEMS capacitive switches; high-cycle life testing; silicon dioxide film; situ monitoring; Air gaps; Biomembranes; Dielectrics and electrical insulation; Life testing; Micromechanical devices; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Silicon compounds; Switches; MEMS switches; RF MEMS; dielectric charging; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location
Honolulu, HI
ISSN
0149-645X
Print_ISBN
1-4244-0688-9
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2007.380099
Filename
4264207
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